Fab: CPFC Optoelectronic/Photonic Process Technology: Processing of III-V Materials on GaAs Substrates

Prototyping services from Canadian Photonics Fabrication Centre (CPFC) in III-V compound materials, supported by design kits and on-site CMC engineer, streamline prototyping nano-photonics via complex processes.

As guidelines, the following III-V custom processes are currently in place and available to CMC clients. Project feasibility is evaluated on a case-by-case basis.

• Dry etch process characteristics:
  • End point monitoring for depth control
  • Wet etch finish on etch stop available
  • Low and medium aspect ratio etch patterns
  • Etchable Materials:
    • GaAs substrates: GaAs, AlGaAs, AlAs
• Low-stress dielectric passivation layers

• Ridge waveguide formation combined by dry and wet etching
• Stress compensated dielectric passivation
• Evaporated and/or electroplated metal
• Ohmic contacts
• Continuous or segmented electrode termination
• On wafer unique device ID
• Cleaving, dicing and coating (LR ~ 5% / HR ~ 90%)

Electroabsorption modulator (EAM) process:

• Ridge waveguide devices (deep etched ridges)
• Stress compensated dielectric passivation
• Airbridge or polymer/dielectric interconnect support
• Evaporated and/or electroplated metal
• Ohmic contacts
• Continuous or segmented electrode termination
• On wafer unique device ID
• Cleaving, dicing and AR coating