Characterization Report: ST 28 nm Bulk CMOS LP Process

Characterization Report: ST 28 nm Bulk CMOS LP Process
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This report authored by Prof. Sorin Voinigescu's group at the University of Toronto describes transistor test structures designed during the October 2011 to February 2012 period in the 8-metal version of the STMicroelectronics 28nm LP high-k metal gate CMOS process. The report includes layout design guidelines and measurement results. Measurements are compared with those performed in the same setup on STMicroelectronics 65nm GP CMOS devices.

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