Fab: Optoelectronic/Photonic Process Technology: III-V Epitaxy on GaAs Substrates

Fab: Optoelectronic/Photonic Process Technology: III-V Epitaxy on GaAs Substrates
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Prototyping services from Canadian Photonics Fabrication Centre (CPFC) in III-V compound materials, supported by design kits and on-site CMC engineer, streamline prototyping nano-photonics via complex processes.

For early-stage prototyping in III-V materials, CMC provides access to CPFC foundry services at subsidized rates. The foundry grows epitaxial wafers on GaAs (see details below) and InP [link to CMC-00200-00417] substrates via Metal-Organic Chemical Vapour Deposition (MOCVD), supported by metrology services for quality assurance. Custom processes applied on a case-by-case basis realize the desired geometry and functionality.

GaAs Substrate Process Details:
            •             Epitaxy (lattice matched): GaAs, AlGaAs, AlAs, InGaAsP
            •             Dopant: p-type (C, Zn), n-type (Si)
            •             Substrate Characteristics: Crystal orientation: (100)
            •             Dimension: 2”(7 wafers/run), 3”(3 wafers/run), 4” (1 wafer/run), 6” (1 wafer/run)
            •             Dopant: n-type; S.I.GaAs substrate
Note: Some substrate sizes may not be in stock

Lithography Services:
            •             I-line 5x Stepper:
                          Minimum feature size of 0.4μm (diffraction limit)
                          Overlay tolerance of 70nm
            •             Contact lithography for large feature sizes
            •             E-beam lithography (limited availability)

III-V Custom Processes:
As guidelines, the following are currently in place and available to CMC clients. Project feasibility is evaluated on a case-by-case basis.
            •             Passive waveguides: 
                                    o         Typically formed through maximum two-step etching process
            •             Ridge waveguide-type active devices:  
                                    o         Fabry-Perot (F-P) laser process
                                    o         Semiconductor optical amplifier (SOA)/Superluminescent light 
                                               emitting diode (SLED) process
                                    o         Distributed feedback (DFB) laser process
                                    o         Electroabsorption modulator (EAM) process
            •             Buried Hetero-structure waveguide type active (limited availability)
                                    o         Fabry-Perot (F-P) laser process

Epitaxy-Specific Metrology:
            •             In-situ reflectance growth rate monitoring and optical  pyrometry
            •             Double crystal X-ray diffraction (single point and  mapping)
            •             Photoluminescence (PL) and reflectance (R) mapping
            •             Surfscan™ (for defect counting and mapping)
            •             Electrochemical (Polaron) profiling 
            •             Hall effect
            •             Nomarski surface inspection
            •             SEM, AUGER, SIMS, TEM, AFM, STEM
Typically Requested Epitaxy Metrology:
            •             Photoluminescence (PL) map (Resolution 0.2 mm)
            •             Double crystal X-ray diffraction (single point and mapping)
            •             Electrochemical (Polaron) profiling
            •             Surfscan™ (for defect counting and mapping)
Note: Analysis done on calibration structures and/or actual wafers

Licensing Requirements or Restrictions

Please see Help with Licensing to review licensing procedure. For more information, contact our License Administrator at licensing@cmc.ca or 613-530-4787.

Acknowledging CMC

If your research benefits from products and services provided by CMC Microsystems, please acknowledge this support in any publications about your work. For more information, please visit Acknowledge CMC.