Fab: CPFC Optoelectronic/Photonic Process Technology: Processing of III-V Materials on GaAs Substrates

Prototyping services from Canadian Photonics Fabrication Centre (CPFC) in III-V compound materials, supported by design kits and on-site CMC engineer, streamline prototyping nano-photonics via complex processes.

As guidelines, the following III-V custom processes are currently in place and available to CMC clients. Project feasibility is evaluated on a case-by-case basis. 

Passive waveguides (typically formed using a maximum of two etch steps):

• Dry etch process characteristics:
  • End point monitoring for depth control 
  • Wet etch finish on etch stop available 
  • Low aspect ratio etch patterns, typical 1:10 (depth:width)
  • Etchable Materials:
    • GaAs substrates: GaAs, AlGaAs, AlAs 
• Dielectric passivation layer
   

Ridge waveguide-type Active Devices:  
Fabry-Perot (F-P) laser process: 

• Ridge waveguide devices
• Stress compensated dielectric passivation
• Evaporated and/or electroplated metal
• Ohmic contacts 
• Continuous or segmented electrode termination 
• On wafer unique device ID 
• Bar cleaving and coating (LR ~ 5% / HR ~ 90%) 

Semiconductor optical amplifier (SOA) / Superluminescent light emitting diode (SLED) process 

• Ridge waveguide devices
• Angles: 8 and 12 deg from crystallographic axis  
• Stress compensated dielectric passivation
• Evaporated and/or electroplated metal
• Ohmic contacts 
• Continuous or segmented electrode termination 
• On wafer unique device ID 
• Bar cleaving and coating  

 Distributed feedback (DFB) laser process 

• Ridge waveguide devices
• Stress compensated dielectric passivation
• Holographic uniform first-order grating or e-beam localised/phase jumped grating
• 1 Overgrowth epitaxial step
• Evaporated and/or electroplated metal
• Ohmic contacts 
• Continuous or segmented electrode termination 
• On wafer unique device ID 
• Bar cleaving and coating (LR ~ 5% / HR ~ 90%) 

 Electroabsorption modulator (EAM) process 

• Ridge waveguide devices (deep etched ridges) 
• Stress compensated dielectric passivation
• Airbridge or polymer/dielectric interconnect support
• Evaporated and/or electroplated metal
• Ohmic contacts 
• Continuous or segmented electrode termination 
• On wafer unique device ID 
• Bar cleaving and AR coating  

Buried Hetero-structure waveguide type active (limited availability):  
Fabry-Perot (F-P) laser process: 

• BH waveguide devices
• P-n-p blocking layer; 
• 2 Overgrowth epitaxial steps 
• Evaporated and/or electroplated metal 
• Ohmic contacts 
• Continuous electrode only 
• On wafer unique device ID 
• Bar cleaving and coating (LR ~ 5% / HR ~ 90%)